We describe this website maximum likelihood-based procedures for fitting copula-based models to spike-count data, and we derive a so-called flashlight transformation which makes it possible to move the tail dependence of an arbitrary copula into an arbitrary orthant of the multivariate probability distribution. Mixtures of copulas that combine different dependence structures and thereby model different driving processes simultaneously are also introduced. First, we apply copula-based models to populations of integrate-and-fire neurons receiving partially correlated input and show that the best fitting copulas provide information about the functional

connectivity of coupled neurons which can be extracted using the flashlight transformation. We then apply the new method to data which were recorded from macaque prefrontal cortex using a multi-tetrode array. We find that copula-based distributions with negative binomial marginals provide an appropriate stochastic model for the multivariate spike-count distributions rather than the multivariate Poisson latent variables distribution and the often used multivariate

normal distribution. The dependence structure of these distributions provides evidence for common inhibitory input to all recorded stimulus encoding neurons. Finally, Bioactive Compound Library cell line we show that copula-based models can be successfully used to evaluate neural codes, e. g., to characterize stimulus-dependent spike-count distributions with information measures. This demonstrates that copula-based models

are not only a versatile class of models for multivariate distributions of spike-counts, but that those models can be exploited to understand functional dependencies.”
“High aspect ratio (HAR) silicon etch is reviewed, including commonly find more used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology.