Owing to the self-organized hexagonal arrays of uniform parallel nanochannels, anodic aluminum oxide (AAO) film has been widely used as the template for nanoarray growth [26–29]. Many distinctive discoveries have been made in the nanosystems fabricated Selleck GW 572016 in AAO films [30–34]. As increasing emphasis is placed on low cost, high throughput, and ease of production, AAO template-assisted nanoarray synthesis is becoming the method of choice for the fabrication of nanoarrays [35]. However, due to the existence of a barrier layer, it is impossible to grow nanoarrays instantly after the

AAO template has been prepared via a two-step anodization PF-3084014 process using direct current (DC). Some complicated processes must be included, such as the Al foil removing, the barrier layer etching, and the conducting layer making. The pregrowth processes dramatically increase the

difficulty of AAO template-assisted nanoarray synthesis especially in the case that a thin AAO film with selleck a few micrometer is required [18]. On the other hand, it is reported that alternating current (AC) can get across the barrier layer and implement direct metal array deposition [36–38]. However, using the AC method, it is difficult to grow the nanoarray as ordered as that using DC, which leads to poor field enhancement and broad surface plasmon resonance (SPR) peaks

[18, 36–38]. This flaw prevents the AC growth method from being widely used. In this paper, we propose a pulse AC metal nanoarray growth method, which can cut off some inevitable complicated processes in AAO DC deposition and easily fabricate metallic nanoarrays as uniform as those by DC deposition. The extinction spectra, the quantum dot (QD) emission rate manipulation measurement, as well as the theoretical analysis of electric field distribution and local density of Phloretin states (LDOS) confirm that the pulse AC-grown Au nanoarrays can be a good candidate for nanoantennas. Methods Preparation of samples The AAO templates were prepared by a two-step anodization process [18, 33]. First, the aluminum sheets (purity 99.999%) were degreased in acetone and electropolished under a constant current condition of 1.2 A for 3 min in a mixture of HClO4 and C2H5OH at 0°C to smooth the surface morphology. In the first and second anodization processes, treated aluminum sheets were exposed to 0.3 M H2SO4 or H2C2O4 solution under a constant voltage of 19 or 45 V in an electrochemical cell at a temperature of about 4°C. The alumina layer produced by the first anodization process was removed by wet chemical etching in a mixture of phosphoric acid (0.15 M) and chromic acid (0.