The band offset between ZnO and ZnSe together with the resulted effective band gap of ZnO/ZnSe core/shell heterojunctions is favorable for improving the transport of both electrons and holes ABT-888 as well as extending the light absorption region to match the solar spectrum. Meanwhile, the staggered band alignment in type-II heterojunctions facilitates the separation of photogenerated electrons and

holes, which is an essential procedure in a photovoltaic device and quite significant to find more enhance the conversion efficiency of solar cells. In this work, we studied the optical properties corresponding to the respective excitonic band gaps of wurtzite ZnO and zinc blende ZnSe for ZnO/ZnSe heterojunctions MGCD0103 mw in the form of ZnO/ZnSe core/shell NRs. Aligned virgulate ZnO/ZnSe NRs composed of wurtzite ZnO

cores and zinc blende ZnSe shells were fabricated by pulsed laser deposition of ZnSe coatings on the surfaces of hydrothermally grown ZnO NRs. The optical properties of the samples were studied by photoluminescence (PL) measurements which show a significant reduction in the emission from ZnO and co-appearance of the near band edge (NBE) emissions of both ZnO and ZnSe. The former suggests the suppression of radiative recombination of photogenerated carriers, while the latter reveals an extended photoresponse which was further confirmed by optical transparency measurement. Both are favorable for photovoltaic applications. Methods Sample fabrication Prior to the growth of ZnO NRs, a dense nanocrystalline ZnO (NC-ZnO) film (approximately 20 nm) was first deposited on a chemically cleaned Si (100) substrate by plasma-assisted 17-DMAG (Alvespimycin) HCl pulsed laser deposition. ZnO NRs were grown on the NC-ZnO-seeded Si substrate by hydrothermal reaction. The deposition of NC-ZnO film and the growth of ZnO NRs have been described previously [13]. Serving as the cores, the prepared ZnO

NRs were transferred to a vacuum chamber and fixed on a rotating table for the deposition of ZnSe coatings as the shells. The second harmonic of a Q-switched Nd:YAG laser was used to ablate a ZnSe target after being focused by a spherical lens. The laser wavelength, pulse duration, and repetition rate were 532 nm, 5 ns, and 10 Hz, respectively. The focused laser beam with a spot size of 1.2 mm2 was incident on the target surface at an angle of 45°. The laser fluence on the target surface was 2 J/cm2. ZnSe was deposited at a base pressure of approximately 10−4 Pa for 30 min. The deposition of ZnSe coatings were performed at room temperature (RT) or at an elevated temperature of 500°C. The ZnO/ZnSe core/shell NRs obtained by depositing ZnSe at RT were annealed at 500°C in a flowing N2 atmosphere (approximately 105 Pa) for 1 h.