311 nm, c = 0 498 nm [23], C 13 = 99 GPa, and C 33 = 389 GPa for

311 nm, c = 0.498 nm [23], C 13 = 99 GPa, and C 33 = 389 GPa for AlN [24]; and a = 0.354 nm, c = 0.5706 nm

[23], C 13 = 121 GPa, and C 33 = 182 GPa for InN [25]. For In x Al1-x N ternary alloy, both lattice constants and Poisson’s ratio v(x) are obtained by linear interpolation from the values of binaries. As a result, it can be concluded that the molar fraction of InN on a biaxially strained In x Al1-x N film is the only possible solution between 0 and 1 for the following third-order equation which presents x as a function only of two variables. The In composition (x) is accordingly to be high throughput screening assay calculated as x = 0.57 ± 1% (TMIn/TMAl, approximately 1.29), 0.64 ± 1% (TMIn/TMAl, approximately 1.4), 0.71 ± 1% (TMIn/TMAl, approximately 1.51), and 0.80 ± 1% (TMIn/TMAl, BMS345541 datasheet approximately 1.63) by Vegard’s law. The XRD pattern of an In content of <0.64 exhibits extremely weak and broad peaks, which indicates that the film is of poor quality due to structural defects. Also, the In0.64Al0.36 N film shows a polycrystalline structure, suggesting that the in-plane residual stress of the In0.64Al0.36 N film is almost relaxed after growth. At above x = 0.71, the pattern indicates that the InAlN films are preferentially oriented in the c-axis direction. In addition,

a weak shoulder peak (2θ, approximately 31.909°) was detected at the highest In content of approximately check details 0.71, indicating an intermediate layer between the film and the Si substrate. As can be seen in Figure  2b, the lattice parameters for

c-axis and a-axis obtained from symmetric (0002) and asymmetric ( ) diffractions of InAlN increased with the increase of In content. The results agree with the theoretical calculations and report of Guo et al. [26]. Figure  2b shows the calculated lattice parameters of all In x Al1-x N films with various In compositions. Both c and a lattice parameters exhibit essentially a linear dependence on the In composition with very small deviations from Vegard’s law. In our results, the bowing parameters of δ a  = 0.0412 ± 0.0039 Å and δ c  = -0.060 ± 0.010 Å describe the deviations from Vegard’s rule. Therefore, the variation of the In x Al1-x N lattice parameters with In content x can be approximated as follows: where InN and AlN lattice parameters are based on a previous study (for InN, a = 3.538 Å and c = 5.706 Å [27]; Astemizole for AlN, a = 3.11 Å and c = 4.98 Å) [23]. The lattice parameter of the In0.57Al0.43 N film was calculated to be larger than the theoretical value, which may be caused by phase separation and/or lattice strain. The in-plane residual stress of all InAlN films is shown in the inset of Figure  2b. The residual stress was tensile at an In content of >71%. The compressive stresses occurred in the films deposited at an In content of <64%. When the In content is high (>71%), small tensile intrinsic stresses are observed. It has been proposed that one reason for the occurrence of tensile intrinsic stresses is the existence of numerous grain boundaries.

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